PART |
Description |
Maker |
A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
|
K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
IC62C1024L IC62C1024L-35Q IC62C1024L-35QI IC62C102 |
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM From old datasheet system 55ns; 5V; 128K x 8 low power CMOS static RAM 35ns; 5V; 128K x 8 low power CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
E28F002BL-T150 28F200BL-TB PA28F200BL-T150 E28F200 |
2-MBIT (128K x 16/ 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16 / 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY 256K X 8 FLASH 12V PROM, 150 ns, PDSO40
|
Intel Corporation Intel Corp. Intel, Corp.
|
GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 |
256K X 8 STANDARD SRAM, 12 ns, PDSO44 256K X 8 STANDARD SRAM, 10 ns, PDSO44 TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM 256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36 TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM 256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
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ETC GSI Technology, Inc. Electronic Theatre Controls, Inc. GSI[GSI Technology]
|